抄録
The atomic flux divergence due to electromigration in a passivated polycrystalline line has been formulated. The divergence has been identified as a governing parameter for electromigration damage in the passivated polycrystalline line, AFD^*_<gen> by experimental verification process. Recently, a prediction method for electromigration failure in the passivated polycrystalline line was proposed using AFD^*_<gen> and the usefulness of the method was verified through experiment. In this study, the prediction method is applied to the angled polycrystalline lines which are covered with passivation. There are few works on prediction of failure in the angled lines, though such lines are widely used in IC (integrated circuit) products. The electromigration failures are simulated when the corner position and its angle are changed. The dependency of lifetime and failure location on line shape is studied.
