抄録
This paper proposes a new high-cycle fatigue parameter for correlating fatigue lives of micro/nanoscale single crystal silicon (Si) structures under bending and tensile stressing. Fatigue tests of micro/nanoscale Si structures under bending/tensile stressing were conducted in order to reveal the influence of deformation mode on Si fatigue lives. Consequently, the authors enabled to propose a shear stress parameter for predicting fatigue lives of Si structures ranging from micro- to nanoscale, regardless of deformation mode and specimen size. The parameter can be used for reliable design of MEMS/NEMS components subjected to fluctuating stress.
