抄録
The prevention of residual stress of thin film syntheses is very important in processing engineering surfaces. In our previous paper, a method that controls the residual stress in crystalline films and the mechanism behind the control of the residual stress was clarified. However, the mechanical properties has not been clarified to date. In this experiment, TiN and Ti films were deposited on silicon substrate. The hardness and elastic modullus, frictional properties and fracture pattern of the films were measured by nanoindentation, pin-on-disk tester and in-situ surface observation system, respectively. The results of our experiment show hardness and elastic modulus decreased with the residual stress and film density. The adhesion strength showed a maximum value at near zero residual stress and the fracture pattern varied with adhesion strength. Moreover the fracture pattern of TiN films with residual stress over 0.5 GPa varied with the crystal orientation.
