抄録
CMP (Chemical Mechanical Polishing), which is a polishing process combining chemical effect by chelating agent and mechanical effect by abrasive grain, is a key technology for multilayered semiconductor. In this study, we propose the water-soluble fullerenol(C_<60>(OH)_x (X=12-44)) as abrasives. Because water-soluble fullerenol has good features such as uniformity of particle size (1 nm) and no metal contamination, it is suitable for abrasives of Cu-CMP in next-generation design rule. In this report, the planarization performance of water-soluble fullerenol slurries is investigated experimentally. It is investigated that the water-soluble fullerenol slurry can planarize the copper surface from 20 to 0.5 nm RMS in 2 min.
