J0601-3-5 SiCパッケージの冷却方法のFEAによる検討([J0601-3]電子情報機器,電子デバイスの強度・信頼性評価と熱制御(3))

抄録

Highly efficient power conversions technology attracts attention towards realization of low carbon society. The development of Silicon carbide (SiC) power device is furthered as the next generation device replaced with Si. However, it is not yet considered enough about the mounting technology of SiC. The chip temperature of SiC is assumed 200-240C. The cooling method of a SiC package were examined by FEA.