抄録
This paper describes an analytical study of white noise in electrostatic MEMS devices. Two noise sources are taken in account, thermal noise and semiconductor interface trap noise. We simulated the noise voltage appeared in the capacitance of an electrostatic MEMS device using AR (autoregressive) equation and found that the interface trap noise is greater than the thermal noise. This suggests that some treatment annihilating such traps is necessary to reduce white noise in MEMS devices.
