抄録
In order to solve the over etching problem which leads to low production yield in the microcantilever process, a new fabrication process by using DRIE etching of silicon from the front side of the silicon wafer has been developed. Silicon free membrane microcantilever with Lead Zirconate Titanate (PZT) thin films 1 to 2 μm in thickness have been successfully fabricated with 100% yield by this new process. Annealing temperature is critical to the property of the PZT film prepared by sol-gel method.
