抄録
We conducted inductively coupled plasma reactive ion etching (ICP-RIE) for sodium-potassium niobate (KNN) thin films by Ar/ C_4F_8 mixture gas in order to develop lead-free piezoelectric MEMS devices. We prepared Cr metal masks on KNN thin films deposited on Si substrate. The etching rate of the KNN films was about 63nm/min, which is about third times faster than Ar dry etching. The ferroelectric properties of KNN thin films were not changed by etching process. This result suggests that the lead-free piezoelectric MEMS devices can be fabricated by dry etching of KNN thin films without damage to the KNN films.
