抄録
Deep Reactive Ion Etching1),2),3) is well established as a commercial technique for forming Micro-Electro-Mechanical Systems (MEMS) devices. Over the last decades, development work has led to increases in silicon etch rate of an order of magnitude while requirements for etch depth uniformity and profile control have become more stringent as the wafer size has increased from 4 inch up to 200/300 mm. This paper describes the leading edge technology and recent improvement of Deep Si RIE on Precise and High rate processing.
