DyScO₃基板上に形成されたBiFeO₃薄膜の組成分析

抄録

With the increasing use of Internet of Things in various domains, which has led to an increase in the number of sensors being installed, it is indispensable to develop environment friendly sensor modules. Correspondingly, we investigated the formation of BiFeO₃ films as a lead-free ferroelectric material on DyScO₃ substrate. Experiments were performed to analyze the film formation process via the sputtering method, followed by heat treatment. Consequently, a BiFeO₃ film was formed with a single (110) orientation, and two types of bonds (FeO and Fe₂O₃) were observed. Additionally, no issues related to adhesion or peeling were found. Thus, the developed BiFeO₃ film can be potentially used as a ferroelectric material in various devices.