抄録
A photovoltaic cell consisting of Au/ Amorphous Carbon (a-C:H) films / n-Si (p-Si) /In-Ga films was prepared. The a-C:H films were deposited on n-type and p-type single crystal silicon substrates by two methods : a) RF-plasma CVD with an undiluted methane gas; and b) RF-magnetron sputtering using a sintered diamond target. Under the light illumination (Xe arc lamp at 100 mw/cm^2), this carbon cell shows a photovoltaic behavior with short circuit photo current of 0.3 mA/cm^2 and open circuit potential of 300 mV. It was found that the photovoltage significantly depends on the thickness of a-C:H films and corresponds to the maximum at about 200 nm. Moreover, a fiber type PV cell (we call it solar fiber) consisting of a tungsten wire / n a-Si:H / i a-Si:H / a-C:H / Al was fabricated. This solar fiber shows open circuit potential of 45 mV at an illumination level of 100 mW/cm^2.
