The photo resist stripping process in photo lithography plays an important role in manufacturing large-scale integration. In the present study, experimental information is obtained to establish high-concentrated ultra pure ozonized water technology for stripping the photo resist, in stead of chemicals such as sulfuricacid or hydrochloric acid. In the experiment, rotating flow of the ozonized water on the photo resist is irradiated by excimer light, wave length is 222 nm. Ozonized water supplied by cleansing nozzle on the rotating wafer forms liquid film flow. After the process, the thickness of unremoved photo resist on the wafer is measured by ellipsometer. As the result, it is clarified that adjusting the irradiation of excimer light and the control of flow on silicon wafer is inevitable to accomplish high efficiency of photo resist removal rate.
