ボルツマン輸送方程式による金属内熱・電気現象の数値計算(オーガナイズドセッション9 マイクロマシン/電子デバイスにおける伝熱問題)

抄録

By the development of micro-fabrication technology, much smaller-size electronic devices will be soon available. In such a smaller device, non-equilibrium state might be appeared for careers in metal and/or semiconductor which composes the device. In such a situation, the device performance estimation by the macroscopic transport equations that assume quasi-equilibrium distribution is difficult. Then we are developing a numerical code based on Boltzman transport equation (BTE), which can analyze thermal and electric phenomena even when the state is far from equilibrium. In this presentation, we show the numerical method of BTE for free electron in metal and the calculation result of thermopower and heat flow.