抄録
Numerical calculation of submicron silicon MOSFET with CMOS structure is performed. Conjugate nature of the thermal and electrical behavior in the device is considered, and the lattice temperature is solved as well as the carrier concentration and the carrier temperature. The numerical results show that the electrical interaction with neighboring devices is a little more serious than the thermal interaction. Furthermore, by comparing the results of this analysis with that of previous analysis, which are considered only one silicon MOSFET, the importance of the device analysis considering CMOS structure is discussed.
