抄録
Recently, compound semicouductors have grown up as a key material. However, the growth of dislocation-free compound semiconductor crystals are still impossible. So, the targets are low dislocation densities of uniform distribution. Dislocation densities are closely related to configuration of solid-liquid boundary of GaAs. We have tried to simulate temperature distribution of the equipment of LEC-growth of GaAs crystal. The numerical simulation with 2-D steady model are performed using FLUENT. In case when melt treated as solid, the numerical simulation apparently could not simulate real temperature distribution of GaAs melt. In case when melt is treated as liquid, simulation results get close to real distribution. So, convection flow of GaAs melt are important by simulating temperature distribution of GaAs melt. It is necessary to identify dominative factors on flow and temprature profiles.
