抄録
Deposition rate of TiN has been investigated in a hot-wall Chemical Vapor Deposition reactor. Using TiCl_4-H_2-N_2 gas mixtures at 950℃<T_s(setting temperature)<1200℃, Q_<N2>(flow rate of Nitrogen)=1[slm], Q_<H2>(flow rate of Hydrogen)=1[slm] and 0.0009<y _<TiCl4>(molar fraction of TiCl_4)<0.0044, the deposition rate has a maximum value. Near the reactor inlet and then decreases monotonously along the axial direction of the reactor. The maximum value increases with the setting temperature while the value approaches a constant value with increasing the molar fraction of TiCl_4, From these experimental results, the chemical reaction seem to be expressed by the mechanism of Langmuir-Hinshelwood
