抄録
Growth rate of TIN film by thermal chemical vapor deposition has been investigated. When the setting temperature, Ts, is 1200℃, the growth rate at an almost uniform temperature zone decrease exponentially with the distance. In this case , the growth rate is controlled by the diffusion of TiCl_4. The controlling step doesn't depend both on the pressure and the bubbling flow rate of TiCl_4. On the other hand, at Ts<1200℃, the growth rate at the almost uniform temperature zone is divided by two steps. Therefore, growth rate of TiN film depends not only the diffusion of TiCl_4 and the surface reaction but also the gas phase reaction.
