熱工学コンファレンス講演論文集
Online ISSN : 2424-290X
セッションID: B132
会議情報
B132 非平衡プラズマジェットCVDに於けるSi結晶化度制御法の実験的研究(一般講演(3))
納土 亮松永 卓真井関 将仁牟田 浩司西田 哲栗林 志頭眞
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会議録・要旨集 フリー

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Solar energy is capturing the spotlight as clean energy replaced with atomic energy. Then, we paid attention to the thin film silicon solar cell with low manufacture cost. It is usually manufactured by PECVD under low back pressure. We found that high-speed film deposition was enabled by increasing back pressure. However, high back pressure is put into the domain of a viscous flow, and produces involvement of clusters. The film quality will be worsened if a cluster adheres to a substrate. In order to attain a high quality and high deposition rate, it is necessary to investigate the dependence between the back pressure and deposition quality, and the relation between the back pressure and deposition rate. This paper reports the experimental results.
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