2004 年 70 巻 11 号 p. 1412-1417
Multi-layer thin film, which consists of hydrogenated amorphous silicon (a-Si:H) and thin metal films, is used to form solar cells. Laser beam processing is one of the most important techniques to create the integrated structure of a-Si:H solar cells. Unfortunately heat affection of a-Si:H, a serious problem for solar cells, occurs during laser processing. However, it is possible to remove multi-layer thin film without heat affection by back-side irradiation with a SHG YAG laser, in which the laser beam irradiates a-Si:H through glass. This method is being investigated experimentally and the mechanisms of the method are discussed. It is found that the removal of multi-layer thin film is preceded by the creation of hydrogen pressure, which evolves from the decomposition of a-Si:H.