抄録
Many studies have examined electromagnetic shield packages for preventing electromagnetic interference, and several have
discussed adhesion between the mold resin and the electromagnetic wave shielding film. In this study, we investigated the interfacial
behavior between mold resin and sputtered stainless steel film as an electromagnetic wave shielding film. Two mold resin samples
with different amounts of SiO2 filler formed on an organic wiring substrate were plasma etched with different gas flow ratios of Ar and
N2. After etching, stainless steel film and Cu film were formed on the mold resin by sputtering. Adhesion was evaluated by the crosscut
method. The results showed that adhesion between the mold resin and the sputtered stainless steel film improved as the exposure
of the SiO2 filler increased and as the N2/（Ar + N2） gas flow ratio in the etching gas was increased. As the N2/（Ar + N2） gas flow rate
ratio increased, the amount of resin etched increased, exposing more SiO2 filler. XPS analysis showed that this increased adhesion by
enabling polar interactions between metal atoms and amino group nitrogen atoms. IR reflow after moisture absorption decreased the
amount of nitrogen at the interface, breaking the metal-nitrogen polar interaction and oxidizing the metal, resulting in reduced adhesion.
