表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
特集 : 単結晶基板の表面を比較する―誘電体から半導体, 金属まで―
層状物質基板
上野 啓司小間 篤
著者情報
ジャーナル フリー

2000 年 21 巻 11 号 p. 716-723

詳細
抄録

Layered materials, represented by graphite, mica, MoS2 or GaSe, have a lamellar structure consisting of two-dimensional unit layers. Each unit layer is formed via strong covalent or ionic type bonds, while there is no strong bond between two unit layers; they are bound together via van der Waals-type weak interaction. Then layered materials can be easily cleaved and the clean cleaved surface has a very wide and flat terrace without an active dangling bond. When the thin film growth is investigated on such an inactive surface of a layered material, only weak interaction works between the substrate and the grown material. This results in far small lattice-mismatch distortion in the grown film even if it has a different lattice constant or a crystal structure from the substrate. Consequently, single-crystalline heteroepitaxial growth of layered materials or organic molecular crystals can be achieved from the initial layer on the layered material substrate. In this paper we will explain structure, physical property and usage of some layered material substrates.

著者関連情報

この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
前の記事 次の記事
feedback
Top