2000 年 21 巻 12 号 p. 764-770
Recently, wide bandgap semiconductors, like silicon carbide (SiC), nitrides and diamond have been intensively studied for high power, high frequency devices and/or devices operating at high temperatures. SiC has 2∼3 times larger bandgap energy, about 10 times larger breakdown voltage, about 2 times larger saturated electron drift velocity and about 3 times larger thermal conductivity than those of Si. These excellent physical and electrical properties make it possible to fabricate electronic devices with superior specifications compared with Si devices. However, there still remain a lot of problems in their device processes to be solved for realizing SiC devices, most of which are closely related to surface sciences of SiC. In this paper, the characteristics of SiC semiconductor and its application fields are briefly described, and then the issues in the SiC device processes are pointed out.