論文
Si(111)7×7表面上のアイランドとステップ終端部の走査トンネル顕微鏡観察
2001 年 22 巻 6 号 p. 382-387
詳細
2001 年 22 巻 6 号 p. 382-387
Small Si islands and atomic steps on Si(111)7×7 have been observed by scanning tunneling microscopy (STM). At the edges of both structures, we observed characteristic elliptic double protrusions in the STM images. We have proposed atomic structural models of the islands and steps. Partial collapse of the islands during STM observation is well explained by the proposed model. It is concluded that the double protrusions are caused by the distortion of the 3×3 half unit-cell (HUC) of the dimer-adatom-stacking fault structure. This HUC has a specific structure that only one side of the triangular HUS is connected with a neighboring 3×3 HUC.
