表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
論文
遷移金属酸化物における抵抗スイッチング現象と二次電子放出効率との相関関係
依田 貴稔木下 健太郎土橋 一史北村 健一岸田 悟
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2011 年 32 巻 7 号 p. 422-427

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Conductive atomic force microscope (C-AFM) writing is attracting attention as a technique which enables to clarify a switching mechanism of resistive random access memory (ReRAM) by providing a filament with large radius. We observed a C-AFM writing area of a NiO film using scanning electron microscope (SEM), and a correlation between contrast in a secondary electron image and a resistance written by C-AFM was confirmed. In addition, it was suggested that the resistance change effect occurred near the surface of the film. We also studied effects of a baking at low temperature and an electron irradiation with low electron energy on the resistance of the C-AFM writing area. As a result, it was suggested that the resistance change effect was caused by a defect-induced-distortion which is relaxed with low energy.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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