ZnSe-ZnS 歪超格子の欠陥生成と界面の安定性

抄録

Photoluminescence (PL) and X-ray diffraction measurements have been performed to investigate the effects et thermal annealing and ion irradiation on the interface properties of low-pressure MOCVD-grown ZnSe-ZhS strained-layer superlattices (SLSs). It is shown from the evaluation of PL linewidth that a fluctuation of the heterointerface between the ZnSe well and the ZnS barrier layers can be completely controlled, within one monolayer. In the present SLS, the interface characteristics are retained against annealing in H₂ atmosphere up to 580°C and no additional strain was observed. On the other hand, N⁺-ion irradiation and the subsequent annealing studies reveal that irradiation-induced defects quench the photoluminescence bands and consequently the fluctuation at the interface takes place. The results of Ar⁺-ion irradiation also suggest that such defects generation causes an additional fluctuation of the interface from about one monolayer to two monolayer.