酸素イオンビームを用いたSIMS分析でのトランジェント領域の図上解析

抄録

An attempt to determine the thickness of native oxide layer on a silicon wafer from a graphical analysis of the transient behavior at an earlier stage of SIMS depth profiling using ¹⁶O₂⁺ beam has been performed. We found out three specified depths from the characteristic shape of ³⁰Si⁺ secondary ion intensity vs. depth curves, which strongly depended on the angle of incidence (θ) and the acceleration energy (E) of ¹⁶O₂⁺ beam. Good linear relationships were found between the three specified depths and E at low angles of incidence. The linear lines extrapolated coincided triply at E=0, and from this, a value of 0.62 nm was obtained as the thickness of the native oxide layer.