表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
STMによるSe処理を施したGaAs(001)表面超構造の研究
重川 秀実大井川 治宏三宅 晃司相磯 良明南日 康夫橋詰 富博桜井 利夫
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1994 年 15 巻 5 号 p. 305-310

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Under the condition of low chemical potential, a 2×3 and other new superstructures, the axes of which are in directions different from crystal axes, were observed for Se-treated GaAs(001) surface by scanning tunneling microscopy (STM). These structures were explained by the dimer model where buckling structures of the Se dimers play important roles. The controversial 2×1 dimer structure was also observed; however, the corrugation in the 2×1 cluster was very small (-0.01nm), which is considered to have caused difficulties in the observation of this surface by STM.

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