ケルビンプローブ顕微鏡を用いたGaAs HEMT断面・ヘテロ構造の電位分布測定
1999 年 20 巻 1 号 p. 9-13
詳細
1999 年 20 巻 1 号 p. 9-13
Kelvin probe force microscopy (KFM) was successfully applied to the two-dimensional potential profile measurements of the cleaved surface of GaAs HEMTs under bias voltage. A high-field region was observed at the drain-side edge of the gate. By measuring the cleaved surfaces of GaAs/AIAs and InAlAs/InGaAs heterostructures, we have obtained potential profile reflecting the work function difference of the material. The minimum distinguishable thickness of the InAlAs/InGaAs heterostructure by the KFM was 40nm. The present KFM technique combined with device simulation will provide a powerful tool for analyzing the electrical properties of the device, not only GaAs devices but also others.
