表面科学
Online ISSN : 1881-4743
Print ISSN : 0388-5321
ISSN-L : 0388-5321
SiとGaAs分子線エピタクシャル成長中のステップダイナミックス
川村 隆明石井 晃
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ジャーナル フリー

1999 年 20 巻 12 号 p. 845-852

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A step plays an important role in the growth process by molecular beam epitaxy, as it serves an active site for incorporating adatoms on the surface. The shape of steps changes by incorporating an adatom, which in turn changes the behavior of adatoms around the step. The shape and the motion of steps are well correlated with adatom kinetics during the growth. Based on a Monte Carlo simulation, such a step dynamics is studied of the epitaxial growth on vicinal surfaces of Si(100) and GaAs(100). There are two types of monatomic height steps on Si(100) and two types of biatomic height steps on GaAs(100). Common and different features during the growth on Si and GaAs are pointed out by showing the morphologies as well as the surface step density variations.

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