高エネルギーイオン散乱法(HEIS)とその応用

抄録

This article reviews the principle, techniques, and applications of high energy ion scattering (HEIS) to surface physics. Particular emphasis is given to computer simulation of the nuclear encounter process between high energy (∼MeV) He ions and target surface atoms. This simulation is mandatory for deriving any quantitative conclusions from experimental measurements. At the same time, it is most useful to comprehend the nature of HEIS and how to use it. Also discussed are possible applications of HEIS to compound semiconductor problems, some of which are under consideration in our Optoelectronics Joint Research Laboratory.