抄録
Oxidized films of hydrogenated amorphous silicon and crystalline silicon, formed anodically and cathodically in plasma process, were studied by XPS. The thickness of the cathodic oxide layer was less than a few nanometers, irrespective of oxidation time, and the oxides included some suboxides such as SiOx (x<2). Contrary to these, the thickness of the anodic oxide layer increased with increasing oxidation time and the oxide did not include any suboxide. A MIS type cell with such an anodically oxidized a-Si: H film showed good characteristics in both photocurrent and dark current.
