As取り込みによるAlAs, GaAs結晶成長のRHEED振動
1987 年 8 巻 3 号 p. 179-185
詳細
1987 年 8 巻 3 号 p. 179-185
Intensity oscillations of reflection high-energy electron diffraction (RHEED) spots, initiated by As incorporation, have been observed for both Ga and Al accumulated layers on GaAs (001) surfaces. Dependences of reconstruction patterns on the As pressure and the substrate temperature have been studied. Applications of this phenomena to a vapor pressure monitor and to crystal growth are also discussed.
