抄録
Si-Si and quartz-quartz bonded wafers were fabricated using surface activated method by fast atomic beam sputtering. In the Si-Si bonded wafer fabricated by surface activated (dry) method non-bonding area decreased with heating at 300°C under a pressure, though in the Si-Si bonding wafer prepared by H2SO4+H2O2 chemical-treatment non-bonding area increased with heating at 300°C. Gas sealed in the non-bonding area was analyzed with a quadrupole mass spectrometer by cracking the wafer in vacuum. The main species of the gas was water (18 emu). The strength of the bonding between the Si-Si wafers bonded by surface activated method was 20 MPa even at non-heating. This is as strong as the bonding of the Si-Si wafer bonded by heating at 1000°C after H2SO4+H2O2 chemical treatment. The bond strength of the quartz-quartz wafer prepared by surface activation and heating at 700°C is similar to that of the wafer bonded by H2SO4+H2O2 chemical treatment and heating at 700°C.
