抄録
Molybdenum oxide films containing various amount of oxygen have been prepared by means of reactive sputtering method. Changing the partial pressure of oxygen from 5×10-6 to 5×10-4 Torr in argon gas (total pressure is maintained at 5×10-3 Torr), the deposition rate, electrical resistivity, structure and chemical composition of sputteled films have been observed. When the partial pressure of oxygen in argon-oxygen mixtures was increased, the deposition rate of films began to decrease drastically at oxygen partial pressures 6×10-5 Torr, presumably the resistivity of films began to increase rapidly, at the same critical pressure of oxygen. Electron prove X-ray microanalysis showed that the content of oxygen in sputtered films was increased with the oxygen partial pressue. In the X-ray diffraction analysis, it was found that molybdenum oxide MoO2 appeared suddenly in the sputtered films at the oxygen pressure of 1 ×10-4 Torr.
On the bases of the experimental data, discussion was made on the mechanism of oxide formation during the reactive sputtering.
