電子線加熱蒸着法のMIS素子におよぼす影響
1973 年 16 巻 2 号 p. 69-76
詳細
1973 年 16 巻 2 号 p. 69-76
The effects of the irradiation of X-ray, which is emitted from electron bombardment heated source during the evaporation of Al thin film, on MOS and MNOS diodes are investigated. The effects of Xray irradiation, which are observed from the measurements of C-V and G-V characteristics of the diodes before and after X-ray and electron bombardment, result in the generation of the oxide charges and the interface states. These effects are annealed out at 400°C. MNOS structures are found to be less influenced by X-ray irradiation and electron bombardment, comparing with MOS structure. In the case of little radiation dose the only generation of the radiation-induced oxide charge is observed in MNOS diode. In the case of larger radiation dose, both the oxide charges and the surface states induced by radiation are also observed. The amount of the space charge induced in the oxide saturates at a certain radiation dose.
