巻号一覧
16 巻, 2 号
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堀越 源一1973 年 16 巻 2 号 p. 51-61
発行日: 1973/02/20
公開日: 2009/09/29
ジャーナル フリーPDF形式でダウンロード (1306K) -
難波 義捷, 毛利 敏男, 立川 道雄1973 年 16 巻 2 号 p. 62-68
発行日: 1973/02/20
公開日: 2009/09/29
ジャーナル フリーThe cross-sectional structure of evaporated Bi films has been investigated electron-microscopically by means of the replica technique. Films were prepared with changing the evaporation conditions : substrate temperature, residual gas pressure and deposition rate. The influence of deposition rate appears most conspicuously at the thickness where the film becomes continuous. The structure of the film surface is essentially determined at this stage. Based on these results, the phenomenalistic treatment was also made by assuming that the deformation of surface takes place due to the surface diffusion of evaporated atoms. It has been shown that the theoretical result as a function of temperature and deposition rate agrees well with the experimental one.抄録全体を表示PDF形式でダウンロード (2665K) -
阿部 東彦, 井上 康郎, 森田 洋司, 榎本 龍弥1973 年 16 巻 2 号 p. 69-76
発行日: 1973/02/20
公開日: 2009/09/29
ジャーナル フリーThe effects of the irradiation of X-ray, which is emitted from electron bombardment heated source during the evaporation of Al thin film, on MOS and MNOS diodes are investigated. The effects of Xray irradiation, which are observed from the measurements of C-V and G-V characteristics of the diodes before and after X-ray and electron bombardment, result in the generation of the oxide charges and the interface states. These effects are annealed out at 400°C. MNOS structures are found to be less influenced by X-ray irradiation and electron bombardment, comparing with MOS structure. In the case of little radiation dose the only generation of the radiation-induced oxide charge is observed in MNOS diode. In the case of larger radiation dose, both the oxide charges and the surface states induced by radiation are also observed. The amount of the space charge induced in the oxide saturates at a certain radiation dose.抄録全体を表示PDF形式でダウンロード (1101K)
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