Abstract
In this paper, the study of ion beam epitaxy system is experimentally described and the structure of InSb thin films grown under the various conditions is determined by the X-ray diffraction method.
The electrical properties of the prepared InSb thin films (e.g. the Hall electron mobility and product sensitivity) are also measured.
The results obtained in thise study are summarized as follows. (1) A dc voltage Vdc for accelerating ions which is applied between the substrate holder and the each evaporator, is very important for the film formation. (2) Optimum ionization rate a of evaporated particles is 1% or so. (3) The maximum Hall electron mobility which is obtained from the resistivity and the Hall coefficient data is 25000 cm2/V· s (when a= 1%, Vdc=1.5 kV).
