Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Search
Advanced search
OR
Browse
Search
Volume 20, Issue 7
Displaying 1-3 of 3 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
  • Sputter Ion Pump
    Tatsuo ASAMAKI
    1977 Volume 20 Issue 7 Pages 233-240
    Published: July 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.233
    JOURNAL FREE ACCESS
    Download PDF (917K)
  • InSb Thin Films Prepared by Ion Beam Epitaxy System
    Takashi OYABU
    1977 Volume 20 Issue 7 Pages 241-246
    Published: July 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.241
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    In this paper, the study of ion beam epitaxy system is experimentally described and the structure of InSb thin films grown under the various conditions is determined by the X-ray diffraction method.
    The electrical properties of the prepared InSb thin films (e.g. the Hall electron mobility and product sensitivity) are also measured.
    The results obtained in thise study are summarized as follows. (1) A dc voltage Vdc for accelerating ions which is applied between the substrate holder and the each evaporator, is very important for the film formation. (2) Optimum ionization rate a of evaporated particles is 1% or so. (3) The maximum Hall electron mobility which is obtained from the resistivity and the Hall coefficient data is 25000 cm2/V· s (when a= 1%, Vdc=1.5 kV).
    View full abstract
    Download PDF (2813K)
  • An Apparatus for Molecular Beam Deposition
    Akira KAWAZU, Yoshio SAITO, Goroh TOMINAGA
    1977 Volume 20 Issue 7 Pages 247-252
    Published: July 20, 1977
    Released on J-STAGE: September 04, 2009
    DOIhttps://doi.org/10.3131/jvsj.20.247
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    An apparatus consisting of two main parts has been constructed for molecular beam deposition. One part of the apparatus, intended for the studies of growth kinetics and crystal structure, is equipped with shelves (on which several substrates are placed), Knudsen cells, a cryostat and a quadrupole mass spectrometer. The other part, which is intended for the measurement of electrical properties, is equipped with a cryostat, point-probes and a magnet. The substrates can be smoothly transferred from the shelves to cryostats, because ball bearings are used and the surfaces of the movable parts are coated with Au by ion-plating.
    View full abstract
    Download PDF (839K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top