オゾン添加反応性直流マグネトロンスパッタによるITOの成膜

抄録

Reactive magnetron sputtering using alloy targets to deposit transparent conductive oxide (TCO) is expected to have a high potential for low cost deposition with high deposition rates. However, at low substrate temperature fully oxidized films with high crystallinity are rather difficult to deposit compared with the sputtering using oxide ceramic targets. In this study oxygen-ozone mixture gas was used as a reactive gas for the enhancement of the oxidation during film growth in the reactive magnetron sputtering processes. Tin-doped Indium Oxide (ITO) films were deposited by dc reactive sputtering using an In-Sn (Sn : 10 wt%) alloy target with the introduction of oxygen-ozone mixture gases (ozone : 010 vol%) on soda-lime glass substrates which were not heated and confirmed to be lower than 60°C during the deposition. The oxidation enhancement by the ozone introduction was observed for both target surface and film surface during the deposition. Polycrystalline transparent ITO films were successfully deposited by the ozone introduction at the “metal mode” region where the target surface was not fully oxidized and hence deposition rate was higher by about one order of magnitude than the one at “oxide mode”.