Reactive magnetron sputtering using alloy targets to deposit transparent conductive oxide (TCO) is expected to have a high potential for low cost deposition with high deposition rates. However, at low substrate temperature fully oxidized films with high crystallinity are rather difficult to deposit compared with the sputtering using oxide ceramic targets. In this study oxygen-ozone mixture gas was used as a reactive gas for the enhancement of the oxidation during film growth in the reactive magnetron sputtering processes. Tin-doped Indium Oxide (ITO) films were deposited by dc reactive sputtering using an In-Sn (Sn : 10 wt%) alloy target with the introduction of oxygen-ozone mixture gases (ozone : 010 vol%) on soda-lime glass substrates which were not heated and confirmed to be lower than 60°C during the deposition. The oxidation enhancement by the ozone introduction was observed for both target surface and film surface during the deposition. Polycrystalline transparent ITO films were successfully deposited by the ozone introduction at the “metal mode” region where the target surface was not fully oxidized and hence deposition rate was higher by about one order of magnitude than the one at “oxide mode”.

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A new film deposition technique by reactive sputtering using a metal-oxide combined targe (ZrTi + PbO) was proposed and the film growth mechanism was discussed. By the technique perovskite Pb (Zr, Ti) O₃ (PZT) films could be grown at a substrate temperature as low as 450°C. Oxygen atoms for the reactive sputtering was not supplied from introduced O₂ gas but from the PbO oxide target. The oxygen flux from the PbO solid source plays an important role to crystallize the perovskite PZT films.

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Co-deposition films of copper (Cu) and metal free phthalocyanine (Pc) (Cu*Pc) were prepared by evaporating Cu and Pc simultaneously in vacuum. From the visible absorption spectra of dilute 1-chloronaphthalene solutions of the Cu*Pc samples, the formation of metal-phthalocyanine complex (CuPc) was confirmed in the samples. The yield of CuPc increases with increase of the deposition rate of Cu component at the constant rate of Pc component. Accordingly, on Pc component, a condition for 100% yield of CuPc formation was determinated. It was also found that each fraction of Pc, CuPc and Cu in the co-deposition film could be also controlled correctly.

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Diamond particles have been prepared from CH₄ H₂ gas mixtures on Si and Al substrates by a pulsed discharge (PD) plasma chemical vapor deposition (CVD) method at low substrate temperatures of nearby 500°C, and their structural changes as a function of PD conditions have been investigated to make clear the possibility of the diamond deposition on the Al substrate. The crystalline quality of the diamond deposited on the Si substrate became superior when the discharge time (Td) in the repetition period of the pulse was shortened from 2 to 0.5 ms under the constant non-discharge time (Tn) of 3 ms. The longer Tn at constant Td was also effective to improve the crystalline quality. When the deposition was performed on the Al substrate under the constant Td=0.5 ms, Al₄C₃ was formed at short Tn of 2 ms, and diamond was formed at longer Tn of 3 ms. The increase of the current at the beginning of the discharge by means of inserting a condenser and a resistor between the electrodes was also effective to deposit diamond component. These results showed PD plasma CVD method was effective to improve the crystalline quality, and could deposit the diamond on the Al substrate at low substrate temperature.

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In this paper, it is shown by Raman spectroscopy that hydrogens with a concentration of 4×10²¹ cm^-3 in amorphous-Si lower the laser energy density of excimer laser annealing (ELA) for the recrystallization of poly-Si film which is deposited by plasma enhanced chemical vapor deposition (PE-CVD) followed by ELA. This activation mechanism is also discussed by the model that the time when the strain energy reaches the critical value at which the secondary recrystallization begins decreases because of the suppression of the vacancy mobility by the hydrogens in the film.

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A simple evaporation technique have been proposed for the fabrication of all-solid-state electrochromic devices, and applied to high-temperature-oxidation of transition metals such as tungsten, manganese and tantalum. A wire coil of such a transition metal was heated by direct current flow in a vacuum chamber under less than 5.3 Pa, and metal oxide films were deposited on ITO glass substrates. The tungsten oxide films were found to be amorphous with slightly blue surfaces. The manganese oxide films showed less transparent, but the tantalum oxide films were transparent. Columnar morphology was observed for all these films. Electrochromic behavior of the as-deposited oxide films was examined with an applied voltage of 2V in 1M LiClO₄ propylene carbonate electrolyte. It was confirmed that the tungsten oxide films show a cathodic type, and the manganese oxide films show an anodic type of electrochromic behavior. Technical points to be improved are summarized in terms of experimental results.

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Incident ions on the chamber surface in electron cyclotron resonance plasma were characterized in situ using a quadrupole mass analyzer, which was shielded with an 1-mm-thick cylinder made of highly permeable material. The incident ions were identified as Cl_x⁺, BCl_x⁺, Al_xCl_y⁺, C_xCl_y⁺ and Si_xCl_y⁺. Their incident energy was about 5 eV, as determined by the potential difference at the sheath. The BCl_x⁺ incident ions reacted with OH which is abundant on the surface of the quartz cylinder and formed B₂O₃ as identified by infrared reflection absorption spectroscopy.

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The field emission characteristics from an n-type Si field emitter formed by focused ion beams (FIB) milling process were investigated. The n-type Si emitter was sharpened by circularly scanned Ga⁺ ions to reduce the radius apex to about 10 nm. The emission characteristics from the emittr were strongly affected by the annealing temperature. The slope of Fowler-Nordheim (F-N) plots and pre-exponential factor of F-N equation were small without annealing process. Both of them increased remarkably with increases in the annealing temperature. The F-N plots of the emitter annealed at 670°C showed slight saturation tendency at high applied voltage region, which was commonly observed from p-type Si emitter. After field evaporation of the emitter surface, the slope of the F-N plots had an inclination to become a linear.

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Effect of the number of evacuation cycles at room temperature on outgassing rate before baking was investigated. A test chamber was fabricated of type-304 stainless steel and finished with buff and electrolytic polishing. Seven succesive evacuation cycles without baking reduced the outgassing rate before baking to that obtained after several evacuation cycles including baking at 150 or 200°C (i.e. the well degassed state). Outgassing rate before baking decreased with time t at a rate of t^-α, where α was 1.05 in the first evacuation cycle and increased up to 1.3 after evacuation cycles with baking at 150, 200 or 450°C. This increase in a indicates that the evacuation cycle changes the distribution of adsorption sites with different activation energies of desorption.

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