A new film deposition technique by reactive sputtering using a metal-oxide combined targe (ZrTi + PbO) was proposed and the film growth mechanism was discussed. By the technique perovskite Pb (Zr, Ti) O3 (PZT) films could be grown at a substrate temperature as low as 450°C. Oxygen atoms for the reactive sputtering was not supplied from introduced O2 gas but from the PbO oxide target. The oxygen flux from the PbO solid source plays an important role to crystallize the perovskite PZT films.
