硫化水素とメタンを用いたマグネトロンスパッタ法によるa-SiCS : H薄膜

抄録

Amorphous SiCS : H films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH₄ and H₂S gas mixtures. The effects of H₂S partial pressure ratio R on the optical and electrical properties of the films were investigated.
With increasing R, sulfur-related bonding configuration can be observed in IR spectra. Both the dark and photo conductivity increase by about two orders of magnitude with increasing R, whereas the optical bandgap decreases slightly. These data imply that S atoms may act as dopants. Moreover, the incorporated S atoms may contribute to relax the disordered structure of undoped films.