抄録
From its novel properties centered on the ultrahigh carrier mobility, graphene, an sp2-bonded carbon atom network, is now attracting skyrocketing attention. To pave a way to industrialization of this new material with inherent excellence, we have developed a method to form graphene on silicon substrates (GOS). By forming an ultrathin (∼100 nm) SiC film on Si substrate and by annealing the surface at 1200 C or higher in vacuo, few-layer graphene is formed on the Si substrate. This GOS technology is expected to bring about new horizon to the Si technology, which now faces several fundamental challenges for its further improvements.
