抄録
We review our recent experiments on the fabrication of nano-electronic devices in single-layer graphene. A graphene nanoribbon device was fabricated by conducting local anodic oxidation lithography using tapping-mode atomic force microcsope. The conductance of the graphene nanoribbon at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to the lateral confinement of charge carriers. A single quantum dot was fabricated by using the conventional electron beam lithography combined with plasma etching of the graphene layer. The quantum dot works as a single-electron transistor, which shows Coulomb blockade characteristics. These results suggest possibilities of the future application of the nano-electronic devices based on graphene.
