抄録
Gallium-doped zinc oxide (GZO) thin films have been deposited on Cyclo-Olefin Polymer (COP) substrates at room temperature by pulsed laser deposition (PLD) using FHG of Nd: YAG laser (λ=266 nm, 1.6 mJ/cm2) and then, thin films were annealed by pulsed laser with FHG of Nd: YAG laser (λ=266 nm, 8~20 mJ/cm2) at room temperature. As a result, the resistivity was improved from 6.61×10−4 Ω·cm to 5.94×10−4 Ω·cm for films annealed at a laser energy density of 12 mJ/cm2.
