抄録
Ultra-thin Ga2O3 doped zinc oxide transparent conduction films was deposited on glass substrates using pulsed laser deposition method by ArF excimer laser (λ=193 nm) at the substrate temperature from 180 to 260 °C. The film thickness was changed from 40 to 110 nm-thick. The target containing 3 and 5 wt.% Ga2O3 were employed. As a result, resistivity of 2.69×10−4 Ω·cm was obtained for the film with 40 nm-thick fabricated using the target containing 5 wt.% Ga2O3 at substrate temperature of 260°C.
