抄録
Fabrication of Flexible Transparent Resistive Random Access Memory (FT-ReRAM) which consists of Ga-doped ZnO (GZO) film not only as a memory layer but also as electrodes on the large Poly Ethylene Naphthalate (PEN) sheet was attained by introducing RF plasma assist DC magnetron sputtering method. The averaged transmittance in the visible region (400-800 nm) was 72%. The resistance change effect without morphological change was confirmed by using conducting atomic force microscope (C-AFM). Stable and repeatable bi-polar resistive switching by applying the voltage less than 2.5 V was confirmed in the all-GZO-FT-ReRAM. The present work showed the high applicability of the all-GZO-FT-ReRAM to achieve flexible transparent devices for the next generation.
