抄録
We have studied the thermoelectric properties of InSb thin films. They were prepared by metalorganic vapor phase epitaxy on sapphire substrate using sputtered InAs buffer layer. Substrate temperature during the deposition of InAs buffer layer was changed between 65°C and 250°C. Electrical properties, thermoelectric properties, and crystalline properties of InSb thin films with a InAs buffer were assessed using Hall measurement, Power factor and X-ray diffraction. The power factor of InSb was as high as 2.1×10−4 W/mK2 at a deposition temperature of 150°C of InAs.
