Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
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反応性スパッタ法による相転移 V2O3 薄膜のサファイア基板上へのエピタキシャル成長
沖村 邦雄鈴木 康史
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2011 年 54 巻 3 号 p. 169-172

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  Vanadium sesquioxide (V2O3) is known as a crystalline phase of vanadium oxide with metal-insulator transition (MIT). This V2O3 has hexagonal corundum crystalline structure same as sapphire. In this study, highly c-axis textured V2O3 crystalline growth on c-plane sapphire substrate was realized even at film thickness around 15 nm under carefully-controlled small oxygen flow conditions in reactive magnetron sputtering. In-plane compressive strain state was found for the thin V2O3 films, while lattice relaxation was observed with increase of film thickness. Under higher growth temperature, abrupt MIT of the films with resistance change over several decades was achieved at temperature around 160 K.

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© 2011 一般社団法人日本真空学会
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