Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
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窒素添加による Ag 膜の成膜速度制御
中西 由貴加藤 和広大本 英雄冨岡 孝夫高松 敦
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2011 年 54 巻 3 号 p. 207-209

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  The nitrogen addition to argon gas during the Ag deposition was investigated to lower the deposition rate. As a result, it was found that the deposition rate systematically decreased with the increase of nitrogen gas concentration; furthermore, the Ag thin films deposited with nitrogen gas exhibited sufficient optical reflectance. It can be considered that the nitrogen gas addition leads to the decrease of sputtering yield and positive ions accelerated to the target, hence, the deposition rate of the Ag thin films decreases.

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© 2011 一般社団法人日本真空学会
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